| PART |
Description |
Maker |
| M5M5W816WG-85HI M5M5W816WG M5M5W816WG-55HI M5M5W81 |
Memory>Low Power SRAM
8388608-BIT (524288-WORD BY 16-BIT) CMOS STATIC RAM
|
RENESAS[Renesas Electronics Corporation]
|
| M5M5V5A36GP-85 M5M5V5A36GP M5M5V5A36GP-75 |
Memory>Fast SRAM>Network SRAM
18874368-BIT(524288-WORD BY 36-BIT) Flow-Through NETWORK SRAM
|
RENESAS[Renesas Electronics Corporation]
|
| AS6UA5128 AS6UA5128-BC AS6UA5128-BI |
2.3V to 3.6V 512K x 8 Intelliwatt low-power CMOS SRAM
2.3V to 3.6V 512K Intelliwatt low-power CMOS SRAM 2.3V.6V的为512k Intelliwatt低功耗CMOS SRAM
2.3V to 3.6V 512K×8 Intelliwatt Low-Power CMOS SRAM(2.3V 3.6V 512K×8 Intelliwatt 低功CMOS 静态RAM)
2.3V to 3.6V 512K8 Intelliwatt low-power CMOS SRAM
2.3V to 3.6V 512K】8 Intelliwatt low-power CMOS SRAM
|
Alliance Semiconductor Corporation
SEMICOA[Semicoa Semiconductor]
|
| HY62U8200B HY62U8200B-E HY62U8200B-I A0A17 |
Low Power Slow SRAM - 2Mb
256Kx8bit CMOS SRAM
256K x8 bit 3.0V Low Power CMOS slow SRAM
|
Hynix Semiconductor
|
| WMS512K8BV-20E WMS512K8BV-17E WMS512K8BV-17DEMEA W |
20ns; low voltage operation: 3.3V -10% power supply; 512K x 8 monolithic SRAM
17ns; low voltage operation: 3.3V -10% power supply; 512K x 8 monolithic SRAM
15ns; low voltage operation: 3.3V -10% power supply; 512K x 8 monolithic SRAM
512K X 8 STANDARD SRAM, 17 ns, CDSO32
512Kx8 Monolithic SRAM(512Kx8单片静态RAM（BiCMOS,存取时间17ns
512Kx8 Monolithic SRAM(512Kx8单片静态RAM（BiCMOS,存取时间20ns
|
White Electronic Designs Corporation
|
| M5M5T5636UG-20 M5M5T5636UG-22 M5M5T5636UG-25 |
18874368-BIT(524288-WORD BY 36-BIT) NETWORK SRAM
|
Mitsubishi Electric Semiconductor
|
| M68Z128W M68Z128W-70N1T M68Z128WN |
3V, 1 Mbit 128Kb x8 Low Power SRAM with Output Enable 3V的，1兆位的输128KB的x8低功耗SRAM启用
128K X 8 STANDARD SRAM, 70 ns, PDSO32 8 X 20 MM, PLASTIC, TSOP1-32
3V / 1 Mbit 128Kb x8 Low Power SRAM with Output Enable
|
STMicroelectronics N.V.
ST Microelectronics
意法半导
STMICROELECTRONICS[STMicroelectronics]
|
| AT60142E-DC15SMV AT60142E-DC15SSB AT60142E-DC20M A |
IND 3.3UH 0.2UH THIN-FILM SMD-0805 TR-7 NI/SN-PB RF
SWITCH
Rad Hard 512K x 8 Very Low Power CMOS SRAM 512K X 8 STANDARD SRAM, 15 ns, DFP36
Rad Hard 512K x 8 Very Low Power CMOS SRAM 512K X 8 STANDARD SRAM, 20 ns, DFP36
|
ATMEL[ATMEL Corporation]
Atmel Corp.
Atmel, Corp.
|
| GLT6100L08LL-55TC GLT6100L08LL-70TC GLT6100L08LL-8 |
55ns; Ultra low power 64K x 16 CMOS SRAM
70ns; Ultra low power 64K x 16 CMOS SRAM
85ns; Ultra low power 64K x 16 CMOS SRAM
100ns; Ultra low power 64K x 16 CMOS SRAM
|
G-LINK Technology
|
| AS7C33128NTF32_36B AS7C33128NTF36B-80TQIN AS7C3312 |
3.3V 128K x 32/36 Flowthrough Synchronous SRAM with NTD 128K X 36 ZBT SRAM, 8 ns, PQFP100
3.3V 128K x 32/36 Flowthrough Synchronous SRAM with NTD 128K X 32 ZBT SRAM, 7.5 ns, PQFP100
Cap-Free, NMOS, 150mA Low Dropout Regulator with Reverse Current Protection 128K X 36 ZBT SRAM, 10 ns, PQFP100
3.3V 128K x 32/36 Flowthrough Synchronous SRAM with NTD 128K X 36 ZBT SRAM, 10 ns, PQFP100
3.3V 128K x 32/36 Flowthrough Synchronous SRAM with NTD 128K X 36 ZBT SRAM, 7.5 ns, PQFP100
3.3V 128K x 32/36 Flowthrough Synchronous SRAM with NTD 128K X 32 ZBT SRAM, 10 ns, PQFP100
LM194/LM394 Supermatch Pair; Package: TO-99; No of Pins: 6; Qty per Container: 500; Container: Box 128K X 36 ZBT SRAM, 7.5 ns, PQFP100
LM195/LM395 Ultra Reliable Power Transistors; Package: TO-220; No of Pins: 3; Qty per Container: 45; Container: Rail
LM392 Low Power Operational Amplifier/Voltage Comparator; Package: SOIC NARROW; No of Pins: 8; Qty per Container: 95; Container: Rail
3.3V 128K × 32/36 Flowthrough Synchronous SRAM with NTDTM
LM3916 Dot/Bar Display Driver; Package: MDIP; No of Pins: 18; Qty per Container: 20; Container: Rail
LM392 Low Power Operational Amplifier/Voltage Comparator; Package: MDIP; No of Pins: 8; Qty per Container: 40; Container: Rail
NTD? Sync SRAM - 3.3V
|
Alliance Semiconductor, Corp.
ALSC[Alliance Semiconductor Corporation]
|
| WMS128K8-17FEM WMS128K8-17FM WMS128K8-55CLC WMS128 |
55ns; low power for 2V data retention; 128K x 8 monilithic SRAM, SMD 5962-96691
17ns; low power for 2V data retention; 128K x 8 monilithic SRAM, SMD 5962-96691
15ns; low power for 2V data retention; 128K x 8 monilithic SRAM, SMD 5962-96691
x8 SRAM x8的SRAM
25ns; low power for 2V data retention; 128K x 8 monilithic SRAM, SMD 5962-96691
20ns; low power for 2V data retention; 128K x 8 monilithic SRAM, SMD 5962-96691
|
White Electronic Designs
Microchip Technology, Inc.
Sharp, Corp.
Electronic Theatre Controls, Inc.
Raltron Electronics, Corp.
|
